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| !""#$" !"%#&#"''()# #*+#,-.#* ! "#$%&' ( ( !) * +, ) - . ( !) ". *''"*#"$/ ") !! ! ! ! ) 0 !! ! ! # ! 1! ! ! # !( ! ! *. !! ) 2*# 1 ! " " ! # $ $ # %!! $ & $ $ & '! # # # ( # ) *+ #) ) , " ! - # . !! / # ( ), # ) 0 1 1 " " ! ( 1 " 2 2 " 3! 4 1 1 " 2 2 " 3 # " $ - *$ 5 6 5 !7 89 !7: 89 !"# $% $ &!'( )*+ $ , -$ .-- $ / , $% $ .--$+ $ , -$ - * , 0"% , $ , 1-$+ $ -$ - ) 2# % 3 1 *+ $ )-$ 1 4 4 - 5 ' ' &56( 1*+ $ , )-$ ) - , $% $ 7 )*+ $ )-$ 1 - 1 $ 2# $% $ 1*+ $ , -$ ) ' 8 8 9 : , % ; % $ <--$+ $ , )-$+ 9* 41 )<- '= 3 $ $+ $ , -$+ 3 )7 / 19 2 5 )- 5 1 *+ ' 0 <1 + $ , )-$ . )9- 533 33 11- 4- 0 2 4 6 8 10 12 14 0 5 10 15 20 2SK2675 transfer characteristics v ds = 25v typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a] static drain-source on-state resistance 0.01 0.1 1 10 100 -50 0 50 100 150 2SK2675 v gs = 10v pulse test typ i d = 3.5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ] gate threshold voltage 0 1 2 3 4 5 6 -50 0 50 100 150 2SK2675 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v] safe operating area 0.01 0.1 1 10 100 1 10 100 1000 2SK2675 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit transient thermal impedance 0.01 0.1 1 10 2SK2675 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w] 0 20 40 60 80 100 0 50 100 150 2SK2675 single avalanche energy derating [%] starting channel temperature tch [ c] single avalanche energy derating capacitance 1 10 100 1000 10000 0 20 40 60 80 100 2SK2675 0.005 f=1mhz ta=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf] single avalanche current - inductive load 1 10 2SK2675 0.1 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 v dd = 100v v gs = 15v ? 0v rg = 40 w i as = 7a e as = 160mj e ar = 16mj inductance l [mh] single avalanche current i as [a] 0 20 40 60 80 100 0 50 100 150 2SK2675 power derating power derating [%] case temperature tc [ c] 0 20 40 60 80 100 0 100 200 300 400 500 2SK2675 0 5 10 15 20 gate charge characteristics 200v i d = 7a typ 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v] |
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